Open AccessDeep Level Assessment of n-Type Si/SiO2Metal-Oxide-Semiconductor Capacitors with Embedded Ge Quantum Dots
Author(s) -
Mansour Aouassa,
Henk Vrielinck,
Eddy Simoen
Publication year - 2017
Publication title -
ecs transactions
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.235
H-Index - 52
eISSN - 1938-6737
pISSN - 1938-5862
DOI - 10.1149/08004.0181ecst
Subject(s) - deep level transient spectroscopy , quantum dot , materials science , dangling bond , capacitor , quantum tunnelling , capacitance , dielectric , optoelectronics , semiconductor , gate dielectric , silicon , analytical chemistry (journal) , chemistry , voltage , electrical engineering , transistor , electrode , engineering , chromatography
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