(Invited) Spectroscopy of Deep Gap States in High-k Insulators | Zendy

V. V. Afanas’ev | Zendy; Wan Chih Wang | Zendy; Florin Cerbu | Zendy; Oreste Madia | Zendy; Michel Houssa | Zendy; A. Stesmans | Zendy

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(Invited) Spectroscopy of Deep Gap States in High-k Insulators

Author(s) -

V. V. Afanas’ev,

Wan Chih Wang,

Florin Cerbu,

Oreste Madia,

Michel Houssa,

A. Stesmans

Publication year - 2014

Publication title -

ecs transactions

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.235

H-Index - 52

eISSN - 1938-6737

pISSN - 1938-5862

DOI - 10.1149/06408.0017ecst

Subject(s) - spectroscopy , band gap , acceptor , atomic physics , materials science , density of states , work (physics) , oxide , electron , electron energy loss spectroscopy , condensed matter physics , physics , nuclear physics , thermodynamics , quantum mechanics , metallurgy

The work describes the physical principles of the exhaustive photodepopulation spectroscopy. This method allows one to determine the energy distribution of gap states in insulating materials using the observation of optically-assisted electron removal from the gap states in incremental spectral windows. Examples of the inferred energy distributions of acceptor-type electron states in several high-k oxide insulators (Al 2 O 3 , HfO 2 , Gd x Al 2-x O 3 ) indicate that these are »1-2 eV broad. At the same time, no detectable density of donor states, expected to be present due to oxygen vacancies, is found in the studied oxides.

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