(Invited) Electrical Characterization of Defects in Al2O3  | Zendy

Alexander Schmid | Zendy; F. Kersten | Zendy; Solveig Rentrop | Zendy; Barbara Abendroth | Zendy; Dirk C. Meyer | Zendy; Johannes Heitmann | Zendy

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(Invited) Electrical Characterization of Defects in Al₂O₃

Author(s) -

Alexander Schmid,

F. Kersten,

Solveig Rentrop,

Barbara Abendroth,

Dirk C. Meyer,

Johannes Heitmann

Publication year - 2014

Publication title -

ecs transactions

Language(s) - English

Resource type - Journals

eISSN - 1938-6737

pISSN - 1938-5862

DOI - 10.1149/06102.0011ecst

Subject(s) - materials science , passivation , analytical chemistry (journal) , doping , dielectric , conductance , oxide , characterization (materials science) , capacitance , silicon , fixed charge , layer (electronics) , condensed matter physics , optoelectronics , chemistry , molecular physics , electrode , nanotechnology , physics , chromatography , metallurgy

The dielectric properties of atomic layer deposited pure Al 2 O 3 and Si doped Al 2 O 3 thin films were characterized by various measurement techniques. By the use of capacitance voltage and conductance measurements charged defects within the oxide and at the silicon interface were detected. It was shown that the passivation quality of Al 2 O 3 is strongly related to the density of fixed oxide charges Q f and the interface trap density D it . The fixed charge density could be adjusted from -6.2∙10 12 cm -2 for samples annealed at 500°C to +2.1∙10 12 cm -2 for as deposited Si doped layers. Additionally current voltage characteristics were performed in a temperature range from 25°C to 125°C. The leakage current was found to increase with higher temperature. A barrier height of 0.4 eV was extracted from the data by assuming a Pool-Frenkel mechanism.

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