Impact of Disturb on Retention Time in Single FBRAM Cells | Zendy

S. D. dos Santos | Zendy; Talitha Nicoletti | Zendy; J. A. Martino | Zendy; M. Aoulaiche | Zendy; M. Jurczak | Zendy; Eddy Simoen | Zendy; Cor Claeys | Zendy

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Impact of Disturb on Retention Time in Single FBRAM Cells

Author(s) -

S. D. dos Santos,

Talitha Nicoletti,

J. A. Martino,

M. Aoulaiche,

M. Jurczak,

Eddy Simoen,

Cor Claeys

Publication year - 2013

Publication title -

ecs transactions

Language(s) - English

Resource type - Journals

eISSN - 1938-6737

pISSN - 1938-5862

DOI - 10.1149/05305.0133ecst

Subject(s) - charge sharing , data retention , random access memory , computer science , charge (physics) , voltage , access time , retention time , window (computing) , coupling (piping) , electronic engineering , electrical engineering , computer hardware , materials science , physics , engineering , chemistry , operating system , computer security , chromatography , quantum mechanics , metallurgy

This manuscript presents an investigation of the wordline (WL) and bitline (BL) voltage disturb based on a single floating body random access memory (FBRAM) cell. It is found that several physical mechanisms can disturb the stored charge either fully or partially. The worst cases for disturb are shown and the disturb window for BL and WL are characterized for further operating condition optimization. Moreover, it is shown that in the very dense memory coupling between bitlines or wordlines will spread the disturb even to cells which are not sharing the same BL and WL.

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