Tunnel FETs for Mixed-Signal System-On-Chip Applications | Zendy

Abhijit Mallik | Zendy

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Tunnel FETs for Mixed-Signal System-On-Chip Applications

Author(s) -

Abhijit Mallik

Publication year - 2013

Publication title -

ecs transactions

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.235

H-Index - 52

eISSN - 1938-6737

pISSN - 1938-5862

DOI - 10.1149/05305.0093ecst

Subject(s) - amplifier , electrical engineering , saturation (graph theory) , mosfet , tunnel field effect transistor , quantum tunnelling , chip , voltage , channel (broadcasting) , signal (programming language) , saturation current , optoelectronics , power (physics) , electronic engineering , engineering , physics , field effect transistor , computer science , transistor , cmos , mathematics , combinatorics , programming language , quantum mechanics

A Tunnel FET (TFET), for which the device operation is based upon a band-to-band tunneling mechanism, is known to be very promising for low-power logic applications. A good output current saturation is necessary to make a device also attractive for mixed-signal system-on-chip applications. In this paper, the output current saturation mechanism for a TFET is reviewed. A comparison of different analog performance parameters between a double-gate (DG) n-channel TFET and a similar DG n-channel MOSFET is presented. It is shown that a TFET can produce higher gain at the same power level than a MOSFET. It is also shown that a complementary TFET amplifier can have more than one order of magnitude higher voltage gain than its MOS counterpart

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