Electrical and TDDB Characteristics of High-k/Metal Gate MOS Capacitors with Different RTO Temperatures | Zendy

Hao Xu | Zendy; Hong Yang | Zendy; Shangqing Ren | Zendy; Weichun Luo | Zendy; Yanrong Wang | Zendy; Kai Han | Zendy; Jinjuan Xiang | Zendy; Xiaolei Wang | Zendy; Xueli Ma | Zendy; Wenwu Wang | Zendy; Chao Zhao | Zendy; Dapeng Chen | Zendy; Tianchun Ye | Zendy

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Electrical and TDDB Characteristics of High-k/Metal Gate MOS Capacitors with Different RTO Temperatures

Author(s) -

Hao Xu,

Hong Yang,

Shangqing Ren,

Weichun Luo,

Yanrong Wang,

Kai Han,

Jinjuan Xiang,

Xiaolei Wang,

Xueli Ma,

Wenwu Wang,

Chao Zhao,

Dapeng Chen,

Tianchun Ye

Publication year - 2013

Publication title -

ecs transactions

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.235

H-Index - 52

eISSN - 1938-6737

pISSN - 1938-5862

DOI - 10.1149/05201.0935ecst

Subject(s) - time dependent gate oxide breakdown , materials science , metal gate , capacitor , weibull distribution , tin , electrical engineering , optoelectronics , electronic engineering , voltage , metallurgy , gate oxide , transistor , engineering , statistics , mathematics

The Electric and TDDB characteristics of Si/SiO 2 /HfO 2 /TiN gate MOS capacitor (EOT ~ 9.3 A ) with different RTO temperatures are systematically studied. The TDDB characteristics are sensitive to the RTO temperatures (700 o C, 800 o C and 900 o C), and the higher RTO temperature is, the larger Weibull Slope is shown because of thicker EOT. Compared to 700 o C and 900 o C RTO, the 800 o C RTO has the best TDDB lifetime for 63% failure.

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