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The Electric and TDDB characteristics of Si/SiO 2 /HfO 2 /TiN gate MOS capacitor (EOT ~ 9.3 A ) with different RTO temperatures are systematically studied. The TDDB characteristics are sensitive to the RTO temperatures (700 o C, 800 o C and 900 o C), and the higher RTO temperature is, the larger Weibull Slope is shown because of thicker EOT. Compared to 700 o C and 900 o C RTO, the 800 o C RTO has the best TDDB lifetime for 63% failure.

Electrical and TDDB Characteristics of High-k/Metal Gate MOS Capacitors with Different RTO Temperatures