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In this paper we propose a novel deep-oxide trench SOI-LIGBT (DTPL SOI-LIGBT) with a deep P-Pillar layer in the drift region. The device can not only shorten the device cell pitch but also improve the breakdown voltage simultaneously. Particularly, it offers a fast extraction path for the hole current during turn-off, and in result shows significant improvement in the on-state and switching trade-off.

A Novel Deep–Oxide Trench SOI–LIGBT with a P–Pillar Layer