A Novel Deep–Oxide Trench SOI–LIGBT with a P–Pillar Layer | Zendy

Qiang Fu | Zendy; Bo Zhang | Zendy; Zhaoji Li | Zendy

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A Novel Deep–Oxide Trench SOI–LIGBT with a P–Pillar Layer

Author(s) -

Qiang Fu,

Bo Zhang,

Zhaoji Li

Publication year - 2013

Publication title -

ecs transactions

Language(s) - English

Resource type - Journals

eISSN - 1938-6737

pISSN - 1938-5862

DOI - 10.1149/05201.0017ecst

Subject(s) - silicon on insulator , trench , pillar , materials science , optoelectronics , insulated gate bipolar transistor , layer (electronics) , electrical engineering , voltage , oxide , breakdown voltage , silicon , engineering , nanotechnology , structural engineering , metallurgy

In this paper we propose a novel deep-oxide trench SOI-LIGBT (DTPL SOI-LIGBT) with a deep P-Pillar layer in the drift region. The device can not only shorten the device cell pitch but also improve the breakdown voltage simultaneously. Particularly, it offers a fast extraction path for the hole current during turn-off, and in result shows significant improvement in the on-state and switching trade-off.

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