Physical Properties Elucidation of Filaments in Conducting-Bridge Random Access Memory Consisting of Metal-Oxide | Zendy

Sho Haswgawa | Zendy; Kentaro Kinoshita | Zendy; Shigeyuki Tsuruta | Zendy; Satoru Kishida | Zendy

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Physical Properties Elucidation of Filaments in Conducting-Bridge Random Access Memory Consisting of Metal-Oxide

Author(s) -

Sho Haswgawa,

Kentaro Kinoshita,

Shigeyuki Tsuruta,

Satoru Kishida

Publication year - 2013

Publication title -

ecs transactions

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.235

H-Index - 52

eISSN - 1938-6737

pISSN - 1938-5862

DOI - 10.1149/05034.0061ecst

Subject(s) - oxide , resistive random access memory , materials science , metal , electrode , atmosphere (unit) , layer (electronics) , electrical conductor , analytical chemistry (journal) , optoelectronics , nanotechnology , composite material , chemistry , metallurgy , thermodynamics , physics , chromatography

Recently, it was reported that resistive switching mechanism of Cu/metal-oxide/Pt conducting-bridge random access memories is closely related to residual water in the metal-oxide layer based on the current-voltage ( I - V ) measurements as functions of ambient pressure and temperature. However, which constituent of atmosphere (H 2 O, N 2 , O 2 , etc) affects resistive switching should be investigated rigorously. In this paper, we performed measurement of the atmosphere dependence of I - V characteristics of Cu-probe/HfO 2 /Pt structures composed by contacting the surface of the HfO 2 film on the Pt-electrode with the Cu-probe. Taking advantage of Cu-probe/HfO 2 /Pt structures which ensure high permeability to both gasses and liquids, I - V characteristics were measured in H 2 O, N 2 , O 2 , air, and vacuum. As a result, it was clarified that H 2 O enhances a forming and set processes, whereas reset occurs basing on the common mechanism independent of atmosphere.

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