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Effect of B+ Flux on the Electrical Activation of Ultra-Shallow B+ Implants in Ge
Author(s) -
Bradley R. Yates,
B. L. Darby,
Dirch Hjorth Petersen,
Ole Hansen,
Rong Lin,
Peter F. Nielsen,
Barney L. Doyle,
Alex Kontos,
K. S. Jones
Publication year - 2013
Publication title -
ecs transactions
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.235
H-Index - 52
eISSN - 1938-6737
pISSN - 1938-5862
DOI - 10.1149/05009.0543ecst
Subject(s) - materials science , annealing (glass) , ion implantation , recoil , hall effect , analytical chemistry (journal) , ion , electrical resistivity and conductivity , chemistry , atomic physics , physics , composite material , organic chemistry , chromatography , quantum mechanics

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