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The effect of reactive ion etching (RIE) of Silicon (Si), Germanium (Ge) and highly phosphorous doped Germanium (Ge:P) in an SF 6 -O 2  plasma has been studied. We find that the etch characteristics of etch rate and sidewall profile are greatly affected by the O 2  content. Etching rates of Ge and Ge:P depend on the O 2  content with a significant reduction up to 20% of O 2 . We also find that an anisotropic sidewall etching mechanism exists and is dependent on the percentage of O 2  (%O 2 ) in the plasma. Sidewall angles range from a minimum of 66° to a maximum of 166°, where a critical concentration for etching angle exists where the etching angle can alternate from below 90° to above 90°. In combination, both features allow for precision plasma etching of Si, Ge and Ge:P.

Accurate Reactive Ion Etching of Si, Ge and P Doped Ge in an SF6-O2 Radio-Frequency Plasma