Optical Characterization of Ge-on-Si Grown by using RTCVD | Zendy

Taek Sung Kim | Zendy; Yeon-Ho Kil | Zendy; WoongKi Hong | Zendy; Hyeon Deok Yang | Zendy; Sukill Kang | Zendy; Tae Soo Jeong | Zendy; Kyu-Hwan Shim | Zendy

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Optical Characterization of Ge-on-Si Grown by using RTCVD

Author(s) -

Taek Sung Kim,

Yeon-Ho Kil,

WoongKi Hong,

Hyeon Deok Yang,

Sukill Kang,

Tae Soo Jeong,

Kyu-Hwan Shim

Publication year - 2013

Publication title -

ecs transactions

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.235

H-Index - 52

eISSN - 1938-6737

pISSN - 1938-5862

DOI - 10.1149/05009.0381ecst

Subject(s) - photocurrent , materials science , homogeneity (statistics) , characterization (materials science) , raman spectroscopy , lattice (music) , strain (injury) , analytical chemistry (journal) , crystallography , optoelectronics , optics , nanotechnology , chemistry , mathematics , medicine , statistics , physics , chromatography , acoustics

We have investigated the characterization of Ge-on-Si Grown by using RTCVD. From the HR-XRD analysis, the Ge epi-layer shows good crystalline homogeneity and the lattice parameter of the Ge layer along the growth direction was calculated as 5.654 Å, indicating the compressive strain of 0.07%. The Ge peak Raman shift for each sample indicates compressive strain from the bulk Ge reference. The roll-off in photocurrent after 1600 nm is expected due to the decreased absorption of Ge.

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