Open AccessTowards Very High Voltage SiC Power Devices
Author(s) -
Dominique Planson,
Pierre Brosselard,
Dominique Tournier,
Luong Viêt Phung,
Christian Brykinski
Publication year - 2013
Publication title -
ecs transactions
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.235
H-Index - 52
eISSN - 1938-6737
pISSN - 1938-5862
DOI - 10.1149/05003.0425ecst
Subject(s) - high voltage , silicon carbide , materials science , optoelectronics , voltage , breakdown voltage , power semiconductor device , electrical engineering , engineering physics , diamond , semiconductor device , gallium nitride , low voltage , electric field , wide bandgap semiconductor , engineering , nanotechnology , physics , layer (electronics) , metallurgy , composite material , quantum mechanics
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