Reducing NBTI-induced processor wearout by exploiting the timing slack of instructions
Author(s) -
Fabian Oboril,
Farshad Firouzi,
Saman Kiamehr,
Mehdi B. Tahoori
Publication year - 2012
Publication title -
citeseer x (the pennsylvania state university)
Language(s) - English
Resource type - Conference proceedings
DOI - 10.1145/2380445.2380514
Subject(s) - critical path method , negative bias temperature instability , computer science , idle , scheduling (production processes) , reliability (semiconductor) , hot carrier injection , embedded system , microarchitecture , reliability engineering , parallel computing , transistor , operating system , threshold voltage , engineering , power (physics) , operations management , physics , electrical engineering , systems engineering , quantum mechanics , voltage
Transistor aging due to Negative Bias Temperature Instability (NBTI) is a major reliability challenge for embedded microprocessors at nanoscale. It leads to increasing path delays and eventually more failures during runtime. In this paper, we propose a novel microarchitectural approach combining aging-aware instruction scheduling with specialized functional units to alleviate the impact of NBTI-induced wearout. To achieve this, the instructions are classified depending on their worst-case delay into critical (i.e. the instructions whose delay is close to the cycle boundary) and non-critical instructions (i.e. those instruction with larger timing slack). Each of these classes uses its own (specialized) functional unit(s). By that means it is possible to increase the idle ratio of the units executing the critical instructions, which can be used to extend lifetime by up to 2.3x in average compared to the usually used balanced scheduling policy.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom