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Effect of the spin-orbit interaction is studied for the random potential scattering in two dimensions by the renormalization group method. It is shown that the localization behaviors are classified in the three different types depending on the symmetry. The recent observation of the negative magnetoresistance of MOSFET is discussed. In recent experiments on MOSFET by Kawaguchi et al.,u it was found that electrons confined in the MOS inversion layer exhibit the negative magnetoresist­ ance. This effect is closely related to the localization problem in a random potential. In two dimensions, the quantum inter­ ference is important and, if the impurity scattering is spin-independent, the con­ ductivity vanishes at zero temperature even when the scattering is very weak. 2>

Spin-Orbit Interaction and Magnetoresistance in the Two Dimensional Random System