Step Instabilities on Si(111) Vicinal Face near 1×1 ↔7 ×7 Transition Temperature during Sublimation | Zendy

Kenta Ikawa | Zendy; Masahide Sato | Zendy

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Step Instabilities on Si(111) Vicinal Face near 1×1 ↔7 ×7 Transition Temperature during Sublimation

Author(s) -

Kenta Ikawa,

Masahide Sato

Publication year - 2009

Publication title -

journal of the physical society of japan

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.76

H-Index - 139

eISSN - 1347-4073

pISSN - 0031-9015

DOI - 10.1143/jpsj.78.124602

Subject(s) - vicinal , sublimation (psychology) , materials science , condensed matter physics , chemistry , physics , psychology , psychotherapist , organic chemistry

On a Si(111) vicinal face near the structural transition temperature (860°C), the 7×7 structure and 1×1 structure coexist on a terrace. The 7×7 structure is on the upper side of steps and the 1×1 structure is on the lower side of steps. The diffusion coefficient on the 1×1 structure is larger than that on the 7×7 structure. In this paper, taking account of the difference in the diffusion coefficient, we study the possibility of step instabilities, step wandering and step bunching, occuring during sublimation. © 2009 The Physical Society of Japan

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