Family Effects on Excitons in Semiconducting Carbon Nanotubes | Zendy

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Family Effects on Excitons in Semiconducting Carbon Nanotubes

Author(s) -

Tsuneya Ando

Publication year - 2009

Publication title -

journal of the physical society of japan

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.76

H-Index - 139

eISSN - 1347-4073

pISSN - 0031-9015

DOI - 10.1143/jpsj.78.104703

Subject(s) - exciton , excited state , hamiltonian (control theory) , carbon nanotube , curvature , condensed matter physics , band gap , physics , lattice (music) , image warping , trigonal crystal system , materials science , molecular physics , atomic physics , nanotechnology , crystal structure , chemistry , mathematics , mathematical optimization , geometry , artificial intelligence , computer science , acoustics , crystallography

Family behavior of excitons is studied in carbon nanotubes based on a k · p scheme. Effects responsible for family pattern are characterized by two parameters β representing higher-order terms in the effective Hamiltonian responsible for trigonal warping and p representing amount of effective flux due to curvature and lattice distortion. These parameters are determined through comparison with empirical formula of the lowest exciton and experiments of two-photon absorption giving excited exciton states. The observed family pattern can be reproduced much better for the first gap than for the second gap.

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