Open AccessUltra High Density Scanning Electrical Probe Phase-Change Memory for Archival Storage
Author(s) -
Lei Wang,
C. David Wright,
Purav Shah,
Mustafa M. Aziz,
Abu Sebastian,
Haralampos Pozidis,
Andrew Pauza
Publication year - 2011
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.1143/jjap.50.09md04
Subject(s) - materials science , terabit , phase change memory , stack (abstract data type) , reading (process) , optoelectronics , electrical conductor , tin , diamond , phase change , contact resistance , non volatile memory , computer data storage , nanotechnology , engineering physics , computer science , composite material , layer (electronics) , physics , metallurgy , computer hardware , wavelength , wavelength division multiplexing , political science , law , programming language
The potential for using probe-based phase-change memories for the future archival storage at densities of around 1 Tbit/in. 2 is investigated using a recording medium comprising a Si/TiN/DLC/GeSbTe/diamond-like carbon (DLC) stack together with a conductive PtSi tip for writing and reading. Both experimental and computational simulation results are presented. The simulations include a physically-realistic threshold switching model, as well as the effects of thermal boundary resistance and electrical contact resistance. The simulated bit size and shape correspond closely to that written experimentally. © 2011 The Japan Society of Applied Physics.
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