Open AccessErratum: “Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel Field-Effect Transistors on SiC Layer Grown on Silicon Substrates”
Author(s) -
Hyun-Chul Kang,
Roman Olac-vaw,
Hiromi Karasawa,
Y. Miyamoto,
Hiroyuki Handa,
Tetsuya Suemitsu,
Hirokazu Fukidome,
Maki Suemitsu,
Taiichi Otsuji
Publication year - 2010
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.1143/jjap.49.079201
Subject(s) - materials science , epitaxy , optoelectronics , field effect transistor , layer (electronics) , graphene , silicon , transistor , extraction (chemistry) , channel (broadcasting) , nanotechnology , chemistry , electrical engineering , chromatography , voltage , engineering
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