Field-Effect Transistor with Deposited Graphite Thin Film | Zendy

Hiroshi Inokawa | Zendy; Masao Nagase | Zendy; Shigeru Hirono | Zendy; Touichiro Goto | Zendy; Hiroshi Yamaguchi | Zendy; Keiichi Torimitsu | Zendy

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Field-Effect Transistor with Deposited Graphite Thin Film

Author(s) -

Hiroshi Inokawa,

Masao Nagase,

Shigeru Hirono,

Touichiro Goto,

Hiroshi Yamaguchi,

Keiichi Torimitsu

Publication year - 2007

Publication title -

japanese journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.487

H-Index - 129

eISSN - 1347-4065

pISSN - 0021-4922

DOI - 10.1143/jjap.46.2615

Subject(s) - ambipolar diffusion , graphite , materials science , thin film , enhanced data rates for gsm evolution , field (mathematics) , electron cyclotron resonance , field effect transistor , sputtering , transistor , sputter deposition , optoelectronics , analytical chemistry (journal) , condensed matter physics , electron , nanotechnology , chemistry , electrical engineering , composite material , physics , telecommunications , mathematics , engineering , quantum mechanics , voltage , chromatography , computer science , pure mathematics

By using a bottom-gate top-contact field-effect transistor structure, the field effect of graphite-rich carbon nanocrystallite thin films deposited by electron cyclotron resonance sputtering was investigated. An appreciable ambipolar field effect was observed at the film edge where the thickness was vanishing. On–off current ratios of 2 and 7 were attained at 294 and 150 K, respectively.

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