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Current-Controlled Magnetization Dynamics in the Spin-Flip Transistor
Author(s) -
Xuhui Wang,
G. Bauer,
Teruo Ono
Publication year - 2006
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.1143/jjap.45.3863
Subject(s) - magnetization , magnetization dynamics , condensed matter physics , antiparallel (mathematics) , magnetic anisotropy , single domain , materials science , magnetic field , physics , quantum mechanics
The current driven magnetization dynamics of a thin-film, three magneticterminal device (spin-flip transistor) is investigated theoretically. Weconsider a magnetization configuration in which all magnetizations are in thedevice plane, with source-drain magnetizations chosen fixed and antiparallel,whereas the third contact magnetization is allowed to move in a weak anisotropyfield that guarantees thermal stability of the equilibrium structure at roomtemperature. We analyze the magnetization dynamics of the free layer under a dcsource-drain bias current within the macrospin model and magneto-electroniccircuit theory. A new tunable two-state behavior of the magnetization is foundand the advantages of this phenomenon and potential applications are discussed.Comment: Accepted by JJAP special issue on Magnetization Dynamics in Spintronic Structures and Device

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