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Development of High Electron Mobility Transistor
Author(s) -
Takashi Mimura
Publication year - 2005
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.1143/jjap.44.8263
Subject(s) - high electron mobility transistor , commercialization , transistor , induced high electron mobility transistor , electron mobility , materials science , nanotechnology , engineering physics , optoelectronics , electrical engineering , physics , engineering , political science , voltage , law

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