Conductance Transient Comparative Analysis of Electron-Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposited SiNx, SiO2/SiNxand SiOxNyDielectric Films on Silicon Substrates | Zendy

Helena Castán | Zendy; S. Dueñas | Zendy; J. Barbolla | Zendy; A. del Prado | Zendy; E. San Andrés | Zendy; I. Mártil | Zendy; G. González-Dı́az | Zendy

Open Access

Conductance Transient Comparative Analysis of Electron-Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposited SiN_x, SiO₂/SiN_xand SiO_xN_yDielectric Films on Silicon Substrates

Author(s) -

Helena Castán,

S. Dueñas,

J. Barbolla,

A. del Prado,

E. San Andrés,

I. Mártil,

G. González-Dı́az

Publication year - 2004

Publication title -

japanese journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.487

H-Index - 129

eISSN - 1347-4065

pISSN - 0021-4922

DOI - 10.1143/jjap.43.66

Subject(s) - electron cyclotron resonance , materials science , plasma enhanced chemical vapor deposition , chemical vapor deposition , optoelectronics , dielectric , passivation , silicon , silicon nitride , analytical chemistry (journal) , deep level transient spectroscopy , plasma , chemistry , nanotechnology , layer (electronics) , physics , quantum mechanics , chromatography

An interface quality comparative study of metal-insulator-semiconductor (MIS) structures based on SiNx, SiO2/SiNx and SiO(x)Ny dielectric films deposited on silicon substrates by electron-cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD) has been carried out. Overall interpretation of deep-level transient spectroscopy (DLTS) and conductance transient (G-t) measurements enables us to conclude that the interface quality of Al/SiOxNy/Si MIS structures is superior to those of Al/SiNx/Si devices. Moreover,. we have proved that thermal treatments applied to Al/SiOxNy/Si capacitors induce defect passivation, possibly related to the presence of hydrogen in the films, and disorder-induced gap-state (DIGS) density maxima can decrease to values even lower than those corresponding to Al/SiNx/SiO2/Si devices

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