Electrical Characterization of Al/SiNx:H/n and p-In0.53Ga0.47As Structures by Deep-Level Transient Spectroscopy and Conductance Transient Techniques | Zendy

Helena Castán | Zendy; S. Dueñas | Zendy; J. Barbolla | Zendy; N Blanco | Zendy; I. Mártil | Zendy; G. González-Dı́az | Zendy

Open Access

Electrical Characterization of Al/SiN_x:H/n and p-In_0.53Ga_0.47As Structures by Deep-Level Transient Spectroscopy and Conductance Transient Techniques

Author(s) -

Helena Castán,

S. Dueñas,

J. Barbolla,

N Blanco,

I. Mártil,

G. González-Dı́az

Publication year - 2001

Publication title -

japanese journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.487

H-Index - 129

eISSN - 1347-4065

pISSN - 0021-4922

DOI - 10.1143/jjap.40.4479

Subject(s) - deep level transient spectroscopy , analytical chemistry (journal) , dielectric , annealing (glass) , materials science , conductance , electrical resistivity and conductivity , electron cyclotron resonance , capacitance , chemistry , optoelectronics , condensed matter physics , ion , electrical engineering , silicon , electrode , composite material , physics , organic chemistry , chromatography , engineering

We have analyzed the influence of the dielectric composition and the post deposition rapid thermal annealing (RTA) treatment on the electrical characteristics of electron-cyclotron-resonance plasma-deposited SiNx:H/n and p-In0.53Ga0.47As interfaces. The devices are characterized by means of capacitance-voltage (C-V), deep-level transient spectroscopy (DLTS) and conductance transient analyses. Our results show that a simple cleaning step of the semiconductor surface prior to insulator deposition, and a post deposition RTA process are sufficient to obtain good-quality structures, the n-type being better than the p-type. In both cases, we conclude that a dielectric composition of x = 1.50 seems to be the best choice, and that the most adequate RTA temperature is between 500 degreesC and 600 degreesC

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