Metal Oxide Semiconductor Device Studies of Molecular-Beam-Deposited Al$_{2}$O$_{3}$/InP Heterostructures with Various Surface Orientations (001), (110), and (111) | Zendy

Lungkun Chu | Zendy; Clément Merckling | Zendy; J. Dekoster | Zendy; J. Raynien Kwo | Zendy; M. Hong | Zendy; Matty Caymax | Zendy; Marc Heyns | Zendy

Open Access

Metal Oxide Semiconductor Device Studies of Molecular-Beam-Deposited Al$_{2}$O$_{3}$/InP Heterostructures with Various Surface Orientations (001), (110), and (111)

Author(s) -

Lungkun Chu,

Clément Merckling,

J. Dekoster,

J. Raynien Kwo,

M. Hong,

Matty Caymax,

Marc Heyns

Publication year - 2012

Publication title -

applied physics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.911

H-Index - 94

eISSN - 1882-0786

pISSN - 1882-0778

DOI - 10.1143/apex.5.061202

Subject(s) - materials science , heterojunction , passivation , molecular beam epitaxy , metal , semiconductor , oxide , optoelectronics , conduction band , conductance , layer (electronics) , analytical chemistry (journal) , condensed matter physics , nanotechnology , chemistry , epitaxy , metallurgy , electron , physics , quantum mechanics , chromatography

Passivation of InP surface was carried out in situ with molecular-beam-deposited high-kappa Al2O3. InP samples with surface orientations of (001), (110), and (111) were investigated. An atomically smooth Al2O3/InP(001) interface was observed without interfacial layer formation. In-rich surfaces gave better interfacial quality as evidenced by the improved capacitance-voltage characteristics, exhibiting smaller frequency dispersions and minimized inversion response. The energy distributions of interfacial traps (D-it's) were revealed by conductance measurement for the samples with In-rich surfaces. The D-it's are as low as similar to 10(11) cm(-2) eV(-1) near the conduction band edge, while those near the midgap region are similar to 10(13) cm(-2) eV(-1). (C) 2012 The Japan Society of Applied Physicsstatus: publishe

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