Open AccessSelf-Aligned Inversion-Channel In$_{0.53}$Ga$_{0.47}$As Metal–Oxide–Semiconductor Field-Effect Transistors withIn-situDeposited Al$_{2}$O$_{3}$/Y$_{2}$O$_{3}$ as Gate Dielectrics
Author(s) -
Pen Chang,
Han-Chin Chiu,
T. H. Lin,
Mao Lin Huang,
Wen-Hsin Chang,
Shaoyun Wu,
Kang-Hua Wu,
M. Hong,
J. Kwo
Publication year - 2011
Publication title -
applied physics express
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.911
H-Index - 94
eISSN - 1882-0786
pISSN - 1882-0778
DOI - 10.1143/apex.4.114202
Subject(s) - materials science , transconductance , x ray photoelectron spectroscopy , field effect transistor , annealing (glass) , gate dielectric , optoelectronics , semiconductor , transistor , oxide , analytical chemistry (journal) , electrical engineering , chemistry , nuclear magnetic resonance , physics , metallurgy , voltage , engineering , chromatography
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