Achieving a Low Interfacial Density of States with a Flat Distribution in High-$\kappa$ Ga$_{2}$O$_{3}$(Gd$_{2}$O$_{3}$) Directly Deposited on Ge | Zendy

Chunan Lin | Zendy; H. C. Lin | Zendy; Tsung-Hung Chiang | Zendy; Reilin Chu | Zendy; Lungkun Chu | Zendy; T. H. Lin | Zendy; Yaochung Chang | Zendy; Wei Wang | Zendy; J. Raynien Kwo | Zendy; M. Hong | Zendy

Open Access

Achieving a Low Interfacial Density of States with a Flat Distribution in High-$\kappa$ Ga$_{2}$O$_{3}$(Gd$_{2}$O$_{3}$) Directly Deposited on Ge

Author(s) -

Chunan Lin,

H. C. Lin,

Tsung-Hung Chiang,

Reilin Chu,

Lungkun Chu,

T. H. Lin,

Yaochung Chang,

Wei Wang,

J. Raynien Kwo,

M. Hong

Publication year - 2011

Publication title -

applied physics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.911

H-Index - 94

eISSN - 1882-0786

pISSN - 1882-0778

DOI - 10.1143/apex.4.111101

Subject(s) - materials science , conductance , conduction band , passivation , range (aeronautics) , band gap , condensed matter physics , enhanced data rates for gsm evolution , distribution (mathematics) , thermal conduction , density of states , charge density , analytical chemistry (journal) , dielectric , layer (electronics) , chemistry , optoelectronics , physics , nanotechnology , electron , mathematics , composite material , nuclear physics , telecommunications , mathematical analysis , quantum mechanics , chromatography , computer science

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