High-Frequency Coherent Phonons in Graphene on Silicon | Zendy

Sho Koga | Zendy; Ikufumi Katayama | Zendy; Shunsuke Abe | Zendy; Hirokazu Fukidome | Zendy; Maki Suemitsu | Zendy; Masahiro Kitajima | Zendy; Jun Takeda | Zendy

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High-Frequency Coherent Phonons in Graphene on Silicon

Author(s) -

Sho Koga,

Ikufumi Katayama,

Shunsuke Abe,

Hirokazu Fukidome,

Maki Suemitsu,

Masahiro Kitajima,

Jun Takeda

Publication year - 2011

Publication title -

applied physics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.911

H-Index - 94

eISSN - 1882-0786

pISSN - 1882-0778

DOI - 10.1143/apex.4.045101

Subject(s) - photoexcitation , phonon , graphene , materials science , silicon , relaxation (psychology) , monolayer , anisotropy , condensed matter physics , mode (computer interface) , spectroscopy , raman spectroscopy , molecular physics , optics , optoelectronics , atomic physics , nanotechnology , physics , excited state , psychology , social psychology , quantum mechanics , computer science , operating system

High-frequency coherent vibrations have been investigated in graphene on silicon substrates using pump-probe anisotropic reflectivity spectroscopy with 7.5 fs laser pulses. The coherent phonons of both the intralayer C=C stretching mode (G-mode) and the disorder-induced mode (D-mode) are clearly observed even in monolayer graphenes. The G-mode shifts to higher frequencies as the number of graphene layers decreases, whereas the D-mode does not exhibit such hardening. Moreover, the D-mode softens upon photoexcitation and then shifts to higher frequencies during the relaxation process. The different frequency shift behaviors in the G- and D-modes are discussed.

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