Open AccessERRATUM: "BASE COMPOSITION EFFECTS STUDY ON NBR CURRENT AND CURRENT GAIN IN SiGe HBT"
Author(s) -
Hossein Davoodi,
Hassan Kaatuzian
Publication year - 2013
Publication title -
international journal of modern physics b/international journal of modern physics b
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.24
H-Index - 76
eISSN - 1793-6578
pISSN - 0217-9792
DOI - 10.1142/s0217979213920045
Subject(s) - heterojunction bipolar transistor , engineering physics , current (fluid) , composition (language) , electrical engineering , islamic republic , library science , materials science , telecommunications , engineering , physics , islam , computer science , art , theology , philosophy , transistor , voltage , bipolar junction transistor , literature