The Silicon Lattice Accelerator

Previously, the generalized luminosity L was defined and calculated for all incident channels based on an NLC e{sup +}e{sup -} design. Alternatives were then considered to improve the differing beam-beam effects in the e{sup -}e{sup -}, e{gamma} and {gamma}{gamma} channels. One example was tensor beams composed of bunchlets n{sub ijk} implemented with a laser-driven, silicon accelerator based on micromachining techniques. Problems were considered and expressions given for radiative broadening due to bunchlet manipulation near the final focus to optimize luminosity via charge enhancement, neutralization or bunch shaping. Because the results were promising, we explore fully integrated structures that include sources, optics (for both light and particles) and acceleration in a common format--an accelerator-on-chip. Acceptable materials (and wavelengths) must allow velocity synchronism between many laser and electron pulses with optimal efficiency in high radiation environments. There are obvious control and cost advantages that accrue from using silicon structures if radiation effects can be made acceptable and the structures fabricated. Tests related to deep etching, fabrication and radiation effects on candidate amorphous and crystalline materials indicate Si(1.2 < {lambda}{sub L} < 10 {micro}m) and fused c-SiO{sub 2}(0.3 < {lambda}{sub L} < 4 {micro}m) to be ideal.