Electron spin beats in InGaAs/GaAs quantum dots | Zendy

V. K. Kalevich | Zendy; M. N. Tkachuk | Zendy; P. Le Jeune | Zendy; X. Marie | Zendy; T. Amand | Zendy

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Electron spin beats in InGaAs/GaAs quantum dots

Author(s) -

V. K. Kalevich,

M. N. Tkachuk,

P. Le Jeune,

X. Marie,

T. Amand

Publication year - 1999

Publication title -

physics of the solid state

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.346

H-Index - 51

eISSN - 1090-6460

pISSN - 1063-7834

DOI - 10.1134/1.1130874

Subject(s) - picosecond , quantum dot , excited state , wetting layer , materials science , electron , spectroscopy , solid state physics , ground state , condensed matter physics , optoelectronics , atomic physics , physics , optics , laser , quantum mechanics

Time-resolved picosecond spectroscopy is used for the first time to study optical orientation and spin dynamics of carriers in self-organized In(Ga)As/GaAs quantum-dot (QD) arrays. Optical orientation of carriers created by 1.2 ps light pulses, both in the GaAs matrix and wetting layer, and captured by QDs is found to last a few hundreds of picosecond. The saturation of electron ground state at high-excitation-light intensity leads to electron polarization in excited states close to 100% and to its vanishing in ground state. Electron-spin quantum beats in a transverse magnetic field are observed for the first time in semiconductor QDs. We thus determine the quasi-zero-dimensional electron g factor in In0.5Ga0.5As/GaAs QDs to be: |g ⊥|=0.270.03.

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