z-logo
open-access-imgOpen Access
Efficient and stable perovskite-silicon tandem solar cells through contact displacement by MgF x
Author(s) -
Jiang Liu,
Michele De Bastiani,
Erkan Aydın,
George T. Harrison,
Yajun Gao,
Rakesh R. Pradhan,
Mathan K. Eswaran,
Mukunda Mandal,
Wenbo Yan,
Akmaral Seitkhan,
Maxime Babics,
Anand S. Subbiah,
Esma Ugur,
Fuzong Xu,
Lujia Xu,
Mingcong Wang,
Atteq ur Rehman,
Arsalan Razzaq,
Jingxuan Kang,
Randi Azmi,
Ahmed Ali Said,
Furkan H. Isikgor,
Thomas G. Allen,
Denis Andrienko,
Udo Schwingenschlögl,
Frédéric Laquai,
Stefaan De Wolf
Publication year - 2022
Publication title -
science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 12.556
H-Index - 1186
eISSN - 1095-9203
pISSN - 0036-8075
DOI - 10.1126/science.abn8910
Subject(s) - tandem , perovskite (structure) , materials science , energy conversion efficiency , silicon , perovskite solar cell , optoelectronics , composite material , chemistry , crystallography
The performance of perovskite solar cells with inverted polarity (p-i-n) is still limited by recombination at their electron extraction interface, which also lowers the power conversion efficiency (PCE) of p-i-n perovskite-silicon tandem solar cells. A MgF x interlayer with thickness of ~1 nanometer at the perovskite/C 60 interface favorably adjusts the surface energy of the perovskite layer through thermal evaporation, which facilitates efficient electron extraction and displaces C 60 from the perovskite surface to mitigate nonradiative recombination. These effects enable a champion open-circuit voltage of 1.92 volts, an improved fill factor of 80.7%, and an independently certified stabilized PCE of 29.3% for a monolithic perovskite-silicon tandem solar cell ~1 square centimeter in area. The tandem retained ~95% of its initial performance after damp-heat testing (85°C at 85% relative humidity) for >1000 hours.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom