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Semiconducting polymer blends that exhibit stable charge transport at high temperatures
Author(s) -
Aristide Gumyusenge,
Dung T. Tran,
Xuyi Luo,
Gregory M. Pitch,
Yan Zhao,
Kaelon A. Jenkins,
Tim J. Dunn,
Alexander L. Ayzner,
Brett M. Savoie,
Jianguo Mei
Publication year - 2018
Publication title -
science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 12.556
H-Index - 1186
eISSN - 1095-9203
pISSN - 0036-8075
DOI - 10.1126/science.aau0759
Subject(s) - materials science , polymer , charge carrier , crystallinity , organic semiconductor , atmospheric temperature range , organic electronics , glass transition , transistor , semiconductor , electron mobility , electronics , chemical physics , optoelectronics , chemical engineering , composite material , thermodynamics , chemistry , electrical engineering , voltage , physics , engineering
Although high-temperature operation (i.e., beyond 150°C) is of great interest for many electronics applications, achieving stable carrier mobilities for organic semiconductors at elevated temperatures is fundamentally challenging. We report a general strategy to make thermally stable high-temperature semiconducting polymer blends, composed of interpenetrating semicrystalline conjugated polymers and high glass-transition temperature insulating matrices. When properly engineered, such polymer blends display a temperature-insensitive charge transport behavior with hole mobility exceeding 2.0 cm 2 /V·s across a wide temperature range from room temperature up to 220°C in thin-film transistors.

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