Discovery of robust in-plane ferroelectricity in atomic-thick SnTe | Zendy

Kai Chang | Zendy; Junwei Liu | Zendy; Haicheng Lin | Zendy; Na Wang | Zendy; Kun Zhao | Zendy; Anmin Zhang | Zendy; Feng Jin | Zendy; Yong Zhong | Zendy; Xiao Hu | Zendy; Wenhui Duan | Zendy; Qingming Zhang | Zendy; Liang Fu | Zendy; QiKun Xue | Zendy; Xi Chen | Zendy; ShuaiHua Ji | Zendy

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Discovery of robust in-plane ferroelectricity in atomic-thick SnTe

Author(s) -

Kai Chang,

Junwei Liu,

Haicheng Lin,

Na Wang,

Kun Zhao,

Anmin Zhang,

Feng Jin,

Yong Zhong,

Xiao Hu,

Wenhui Duan,

Qingming Zhang,

Liang Fu,

QiKun Xue,

Xi Chen,

ShuaiHua Ji

Publication year - 2016

Publication title -

science

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 12.556

H-Index - 1186

eISSN - 1095-9203

pISSN - 0036-8075

DOI - 10.1126/science.aad8609

Subject(s) - ferroelectricity , plane (geometry) , materials science , condensed matter physics , physics , optoelectronics , geometry , mathematics , dielectric

Stable ferroelectricity with high transition temperature in nanostructures is needed for miniaturizing ferroelectric devices. Here, we report the discovery of the stable in-plane spontaneous polarization in atomic-thick tin telluride (SnTe), down to a 1-unit cell (UC) limit. The ferroelectric transition temperature T(c) of 1-UC SnTe film is greatly enhanced from the bulk value of 98 kelvin and reaches as high as 270 kelvin. Moreover, 2- to 4-UC SnTe films show robust ferroelectricity at room temperature. The interplay between semiconducting properties and ferroelectricity in this two-dimensional material may enable a wide range of applications in nonvolatile high-density memories, nanosensors, and electronics.

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