Response to Comment on “The Local Structure of Amorphous Silicon”
Author(s) -
M.M.J. Treacy,
Konstantin B. Borisenko
Publication year - 2012
Publication title -
science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 12.556
H-Index - 1186
eISSN - 1095-9203
pISSN - 0036-8075
DOI - 10.1126/science.1222571
Subject(s) - diffraction , nanometre , amorphous solid , amorphous silicon , silicon , resolution (logic) , materials science , amorphous silica , electron diffraction , raw data , crystallography , nanotechnology , optics , chemical physics , chemistry , physics , crystalline silicon , computer science , mathematics , optoelectronics , chemical engineering , statistics , engineering , artificial intelligence
The averaged diffraction data alone cannot distinguish between models with different heterogeneous structures at length scales of about 2 nanometers, even when using high-resolution data. Although our approach to calculating diffraction intensities from the model differs from that of Roorda and Lewis, paracrystallinity in amorphous silicon is undeniably evident in the raw experimental fluctuation electron microscopy data.
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