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Probing Nanoscale Ferroelectricity by Ultraviolet Raman Spectroscopy
Author(s) -
D. A. Ténné,
A. Bruchhausen,
N. D. LanzillottiKimura,
A. Fainstein,
Ram S. Katiyar,
A. Cantarero,
A. Soukiassian,
V. Vaithyanathan,
J. H. Haeni,
Wei Tian,
Darrell G. Schlom,
Kyu-Jin Choi,
D. M. Kim,
ChangBeom Eom,
H. P. Sun,
Xiaoqing Pan,
Yulan Li,
LongQing Chen,
Q. X. Jia,
Serge Nakhmanson,
Karin M. Rabe,
X. X. Xi
Publication year - 2006
Publication title -
science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 12.556
H-Index - 1186
eISSN - 1095-9203
pISSN - 0036-8075
DOI - 10.1126/science.1130306
Subject(s) - ferroelectricity , raman spectroscopy , nanoscopic scale , materials science , dielectric , superlattice , ultraviolet , spectroscopy , kelvin probe force microscope , condensed matter physics , nanotechnology , optoelectronics , optics , physics , atomic force microscopy , quantum mechanics
We demonstrated that ultraviolet Raman spectroscopy is an effective technique to measure the transition temperature (Tc) in ferroelectric ultrathin films and superlattices. We showed that one-unit-cell-thick BaTiO3 layers in BaTiO3/SrTiO3 superlattices are not only ferroelectric (with Tc as high as 250 kelvin) but also polarize the quantum paraelectric SrTiO3 layers adjacent to them. Tc was tuned by approximately 500 kelvin by varying the thicknesses of the BaTiO3 and SrTiO3 layers, revealing the essential roles of electrical and mechanical boundary conditions for nanoscale ferroelectricity.

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