Liberating a hidden antiferroelectric phase with interfacial electrostatic engineering
Author(s) -
Julia A. Mundy,
Bastien F. Grosso,
Colin Heikes,
Dan Ferenc Segedin,
Zhe Wang,
YuTsun Shao,
Cheng Dai,
Berit H. Goodge,
Quintin N. Meier,
Christopher T. Nelson,
Bhagwati Prasad,
Fei Xue,
Steffen Ganschow,
David A. Muller,
Lena F. Kourkoutis,
LongQing Chen,
William Ratcliff,
Nicola A. Spaldin,
R. Ramesh,
Darrell G. Schlom
Publication year - 2022
Publication title -
science advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.928
H-Index - 146
ISSN - 2375-2548
DOI - 10.1126/sciadv.abg5860
Subject(s) - antiferroelectricity , ferroelectricity , metastability , dielectric , materials science , electric field , phase (matter) , electrostatics , nanotechnology , chemical physics , condensed matter physics , optoelectronics , chemistry , physics , quantum mechanics , organic chemistry
Antiferroelectric materials have seen a resurgence of interest because of proposed applications in a number of energy-efficient technologies. Unfortunately, relatively few families of antiferroelectric materials have been identified, precluding many proposed applications. Here, we propose a design strategy for the construction of antiferroelectric materials using interfacial electrostatic engineering. We begin with a ferroelectric material with one of the highest known bulk polarizations, BiFeO3 . By confining thin layers of BiFeO3 in a dielectric matrix, we show that a metastable antiferroelectric structure can be induced. Application of an electric field reversibly switches between this new phase and a ferroelectric state. The use of electrostatic confinement provides an untapped pathway for the design of engineered antiferroelectric materials with large and potentially coupled responses.
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