Surface-state Coulomb repulsion accelerates a metal-insulator transition in topological semimetal nanofilms
Author(s) -
S. Ito,
Masashi Arita,
Jun Haruyama,
Baojie Feng,
W.-C. Chen,
H. Namatame,
M. Taniguchi,
ChengMaw Cheng,
Guang Bian,
S.J. Tang,
T.C. Chiang,
Osamu Sugino,
Fumio Komori,
Iwao Matsuda
Publication year - 2020
Publication title -
science advances
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 5.928
H-Index - 146
ISSN - 2375-2548
DOI - 10.1126/sciadv.aaz5015
Subject(s) - topological insulator , coulomb , semimetal , condensed matter physics , surface states , surface (topology) , topology (electrical circuits) , insulator (electricity) , metal–insulator transition , metal , materials science , physics , quantum mechanics , optoelectronics , band gap , geometry , mathematics , electron , combinatorics , metallurgy
Increased Coulomb repulsion from surface states substantially modulates quantum confinement in topological semimetal nanofilms.
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