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Optothermotronic effect as an ultrasensitive thermal sensing technology for solid-state electronics
Author(s) -
Toan Dinh,
Thanh Nguyen,
Abu Riduan Md Foisal,
HoangPhuong Phan,
TuanKhoa Nguyen,
NamTrung Nguyen,
Dzung Viet Dao
Publication year - 2020
Publication title -
science advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.928
H-Index - 146
ISSN - 2375-2548
DOI - 10.1126/sciadv.aay2671
Subject(s) - electronics , optoelectronics , materials science , silicon carbide , excitation , charge carrier , semiconductor , silicon , thermal , nanotechnology , engineering physics , electrical engineering , physics , meteorology , metallurgy , engineering
The thermal excitation, regulation, and detection of charge carriers in solid-state electronics have attracted great attention toward high-performance sensing applications but still face major challenges. Manipulating thermal excitation and transport of charge carriers in nanoheterostructures, we report a giant temperature sensing effect in semiconductor nanofilms via optoelectronic coupling, termed optothermotronics. A gradient of charge carriers in the nanofilms under nonuniform light illumination is coupled with an electric tuning current to enhance the performance of the thermal sensing effect. As a proof of concept, we used silicon carbide (SiC) nanofilms that form nanoheterostructures on silicon (Si). The sensing performance based on the thermal excitation of charge carriers in SiC is enhanced by at least 100 times through photon excitation, with a giant temperature coefficient of resistance (TCR) of up to -50%/K. Our findings could be used to substantially enhance the thermal sensing performance of solid-state electronics beyond the present sensing technologies.

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