Room temperature in-plane ferroelectricity in van der Waals In 2 Se 3
Author(s) -
Changxi Zheng,
Lei Yu,
Lin Zhu,
James L. Collins,
Dohyung Kim,
Yaoding Lou,
Chao Xu,
Meng Li,
Zheng Wei,
Yupeng Zhang,
Mark T. Edmonds,
Shiqiang Li,
Jan Seidel,
Ye Zhu,
Jefferson Zhe Liu,
W. X. Tang,
Michael S. Fuhrer
Publication year - 2018
Publication title -
science advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.928
H-Index - 146
ISSN - 2375-2548
DOI - 10.1126/sciadv.aar7720
Subject(s) - van der waals force , ferroelectricity , van der waals strain , van der waals surface , plane (geometry) , van der waals radius , condensed matter physics , theorem of corresponding states , phase (matter) , materials science , chemical physics , physics , molecule , quantum mechanics , optoelectronics , dielectric , geometry , mathematics
Van der Waals (vdW) assembly of layered materials is a promising paradigm for creating electronic and optoelectronic devices with novel properties. Ferroelectricity in vdW layered materials could enable nonvolatile memory and low-power electronic and optoelectronic switches, but to date, few vdW ferroelectrics have been reported, and few in-plane vdW ferroelectrics are known. We report the discovery of in-plane ferroelectricity in a widely investigated vdW layered material, β'-InSe. The in-plane ferroelectricity is strongly tied to the formation of one-dimensional superstructures aligning along one of the threefold rotational symmetric directions of the hexagonal lattice in the plane. Surprisingly, the superstructures and ferroelectricity are stable to 200°C in both bulk and thin exfoliated layers of InSe. Because of the in-plane nature of ferroelectricity, the domains exhibit a strong linear dichroism, enabling novel polarization-dependent optical properties.
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