Understanding charge transport in lead iodide perovskite thin-film field-effect transistors | Zendy

Satyaprasad P. Senanayak | Zendy; Bingyan Yang | Zendy; Tudor H. Thomas | Zendy; Nadja Giesbrecht | Zendy; Wenchao Huang | Zendy; Eliot Gann | Zendy; B. Nair | Zendy; Karl C. Goedel | Zendy; S. Guha | Zendy; Xavier Moya | Zendy; Christopher R. McNeill | Zendy; Pablo Docampo | Zendy; Aditya Sadhanala | Zendy; Richard H. Friend | Zendy; Henning Sirringhaus | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Understanding charge transport in lead iodide perovskite thin-film field-effect transistors

Author(s) -

Satyaprasad P. Senanayak,

Bingyan Yang,

Tudor H. Thomas,

Nadja Giesbrecht,

Wenchao Huang,

Eliot Gann,

B. Nair,

Karl C. Goedel,

S. Guha,

Xavier Moya,

Christopher R. McNeill,

Pablo Docampo,

Aditya Sadhanala,

Richard H. Friend,

Henning Sirringhaus

Publication year - 2017

Publication title -

science advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 5.928

H-Index - 146

ISSN - 2375-2548

DOI - 10.1126/sciadv.1601935

Subject(s) - materials science , perovskite (structure) , thin film , electron mobility , halide , iodide , semiconductor , optoelectronics , grain boundary , field effect transistor , transistor , charge carrier , hysteresis , chemical physics , nanotechnology , condensed matter physics , microstructure , chemistry , composite material , voltage , inorganic chemistry , electrical engineering , crystallography , physics , engineering

Fundamental understanding of the charge transport physics of hybrid lead halide perovskite semiconductors is important for advancing their use in high-performance optoelectronics. We use field-effect transistors (FETs) to probe the charge transport mechanism in thin films of methylammonium lead iodide (MAPbI3). We show that through optimization of thin-film microstructure and source-drain contact modifications, it is possible to significantly minimize instability and hysteresis in FET characteristics and demonstrate an electron field-effect mobility (μFET) of 0.5 cm2/Vs at room temperature. Temperature-dependent transport studies revealed a negative coefficient of mobility with three different temperature regimes. On the basis of electrical and spectroscopic studies, we attribute the three different regimes to transport limited by ion migration due to point defects associated with grain boundaries, polarization disorder of the MA+ cations, and thermal vibrations of the lead halide inorganic cages.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research