Attenuation in Heavily Doped P-Type Silicon due to Electron-Phonon Interaction
Author(s) -
W. P. Mason,
T. B. Bateman
Publication year - 1962
Publication title -
the journal of the acoustical society of america
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.619
H-Index - 187
eISSN - 1520-8524
pISSN - 0001-4966
DOI - 10.1121/1.1937136
Subject(s) - attenuation , electron , silicon , polarization (electrochemistry) , materials science , scattering , doping , condensed matter physics , phonon , atomic physics , physics , optics , chemistry , optoelectronics , quantum mechanics
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom