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Voltage control of magnetism in ferromagnetic structures
Author(s) -
L. Herrera Diez,
Weiwei Lin,
Anne Bernand-Mantel,
L. Ranno,
D. Givord,
L. Vila,
P. Warin,
A. Marty,
Na Lei,
T. Devolder,
Joo-Von Kim,
N. Vernier,
Philippe Lecoeur,
D. Ravelosona
Publication year - 2012
Publication title -
proceedings of spie, the international society for optical engineering/proceedings of spie
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.192
H-Index - 176
eISSN - 1996-756X
pISSN - 0277-786X
DOI - 10.1117/12.982039
Subject(s) - spintronics , magnetism , ferromagnetism , magnetic domain , voltage , condensed matter physics , materials science , magnetic anisotropy , domain wall (magnetism) , magnetic field , computer science , physics , magnetization , quantum mechanics
International audienceUntil now, spintronics devices have relied on polarized currents, which still generate relatively high dissipation, particularly for nanodevices based on DW motion. A novel solution to further reduce power consumption is emerging, based on electric field (E) gating to control the magnetic state. Here, we will describe the state of the art and our recent experiments on voltage induced changes in the magnetic properties of ferromagnetic metals. A thorough description of the advances in terms of control of intrinsic properties such as magnetic anisotropy and ferromagnetic transition temperature as well as in intrinsic properties like coercive field and domain wall motion will be presented. Additionally, a section will be dedicated to the summary of the key aspects concerning the fabrication and performance of magneto-electric field-effect devices

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