Single-grain Si TFTs for high-speed flexible electronics | Zendy

Ryoichi Ishihara | Zendy; Tao Chen | Zendy; Michiel van der Zwan | Zendy; Ming He | Zendy; H. Schellevis | Zendy; Kees Beenakker | Zendy

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Single-grain Si TFTs for high-speed flexible electronics

Author(s) -

Ryoichi Ishihara,

Tao Chen,

Michiel van der Zwan,

Ming He,

H. Schellevis,

Kees Beenakker

Publication year - 2011

Publication title -

proceedings of spie, the international society for optical engineering/proceedings of spie

Language(s) - English

Resource type - Conference proceedings

SCImago Journal Rank - 0.192

H-Index - 176

eISSN - 1996-756X

pISSN - 0277-786X

DOI - 10.1117/12.876649

Subject(s) - materials science , thin film transistor , optoelectronics , transistor , electronic circuit , flat panel display , electronics , crystallization , semiconductor , electrical engineering , nanotechnology , layer (electronics) , voltage , chemistry , engineering , organic chemistry

Existent flat-panel display is mechanically stiff because it requires external connection of IC chips. At its present stage, displays with a-Si, metal oxide semiconductor or organic TFTs require still external connection of data driver and controllers, because of their low carrier mobilities. We will review our recent progress on direct formation of high speed Si circuits fabricated with a plastic compatible temperature. Large Si grains with a diameter of 4 microns were formed on predetermined positions by a pulsed laser crystallization process with a plastic compatible temperature. High performance transistors were fabricated inside a single Si grain

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