Epitaxial MOVPE growth of highly c-axis oriented InGaN/GaN films on ZnO-buffered Si (111) substrates | Zendy

A. Ougazzaden | Zendy; David J. Rogers | Zendy; F. Hosseini Téhérani | Zendy; G. Orsal | Zendy; T. Moudakir | Zendy; S. Gautier | Zendy; V. E. Sandana | Zendy; François Jomard | Zendy; M. Abid | Zendy; Michaël Molinari | Zendy; M. Troyon | Zendy; Paul L. Voss | Zendy; D. McGrouther | Zendy; J. N. Chapman | Zendy

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Epitaxial MOVPE growth of highly c-axis oriented InGaN/GaN films on ZnO-buffered Si (111) substrates

Author(s) -

A. Ougazzaden,

David J. Rogers,

F. Hosseini Téhérani,

G. Orsal,

T. Moudakir,

S. Gautier,

V. E. Sandana,

François Jomard,

M. Abid,

Michaël Molinari,

M. Troyon,

Paul L. Voss,

D. McGrouther,

J. N. Chapman

Publication year - 2010

Publication title -

proceedings of spie, the international society for optical engineering/proceedings of spie

Language(s) - English

Resource type - Conference proceedings

SCImago Journal Rank - 0.192

H-Index - 176

eISSN - 1996-756X

pISSN - 0277-786X

DOI - 10.1117/12.846664

Subject(s) - metalorganic vapour phase epitaxy , materials science , epitaxy , cathodoluminescence , wurtzite crystal structure , optoelectronics , indium , gallium nitride , analytical chemistry (journal) , layer (electronics) , nanotechnology , luminescence , zinc , chemistry , metallurgy , chromatography

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