Analysis of strain relaxation and emission spectrum of a free-standing GaN-based nanopillar | Zendy

YuhRenn Wu | Zendy; Peichen Yu | Zendy; Ching-Hua Chiu | Zendy; Cheng-Yu Chang | Zendy; HaoChung Kuo | Zendy

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Analysis of strain relaxation and emission spectrum of a free-standing GaN-based nanopillar

Author(s) -

YuhRenn Wu,

Peichen Yu,

Ching-Hua Chiu,

Cheng-Yu Chang,

HaoChung Kuo

Publication year - 2008

Publication title -

proceedings of spie, the international society for optical engineering/proceedings of spie

Language(s) - English

Resource type - Conference proceedings

SCImago Journal Rank - 0.192

H-Index - 176

eISSN - 1996-756X

pISSN - 0277-786X

DOI - 10.1117/12.800658

Subject(s) - nanopillar , materials science , strain (injury) , gallium nitride , wide bandgap semiconductor , relaxation (psychology) , optoelectronics , condensed matter physics , nanotechnology , physics , nanostructure , psychology , social psychology , layer (electronics) , medicine

We have made a GaN-based single nanopillar with a diameter of 300nm using the focused ion beam (FIB) technique. The micro-photoluminescence (µ-PL) from the embedded GaN/InGaN multi-quantum wells reveals a blue shift of 68.3 meV in energy. In order to explain the spectrum shift, we have developed a valence force field model to study the strain relaxation mechanism in a single GaN-based nanopillar structure. The strain distribution and strain induced polarization effect inside the multiple quantum wells is added to our self-consistent Poisson, drift-diffusion, and Schrodinger solver to study the spectrum shift of µ-PL.

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