Industrial characterization of scatterometry for advanced APC of 65 nm CMOS logic gate patterning
Author(s) -
K. Dabertrand,
Mathieu Touchet,
Stephanie Kremer,
C. Chaton,
Maxime Gatefait,
Enrique Aparicio,
Marco Polli,
Jean-Claude Royer
Publication year - 2008
Publication title -
proceedings of spie, the international society for optical engineering/proceedings of spie
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.192
H-Index - 176
eISSN - 1996-756X
pISSN - 0277-786X
DOI - 10.1117/12.771614
Subject(s) - critical dimension , photolithography , stack (abstract data type) , materials science , lithography , characterization (materials science) , resist , cmos , etching (microfabrication) , metrology , wafer , process window , optoelectronics , metal gate , logic gate , electronic engineering , nanotechnology , computer science , optics , electrical engineering , engineering , gate oxide , transistor , layer (electronics) , physics , voltage , programming language
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