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First principles calculation of point defects and mobility degradation in bulk AlSb for radiation detection application
Author(s) -
Vincenzo Lordi,
Daniel Åberg,
Paul Erhart,
Kuang Jen Wu
Publication year - 2007
Publication title -
proceedings of spie, the international society for optical engineering/proceedings of spie
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.192
H-Index - 176
eISSN - 1996-756X
pISSN - 0277-786X
DOI - 10.1117/12.739117
Subject(s) - electron mobility , materials science , scattering , carrier scattering , density functional theory , impurity , annealing (glass) , charge carrier , crystallographic defect , boltzmann equation , semiconductor , condensed matter physics , optoelectronics , chemistry , optics , physics , thermodynamics , computational chemistry , organic chemistry , composite material

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