Recent progress on GaN-based vertical cavity surface emitting lasers | Zendy

TienChang Lu | Zendy; C. C. Kao | Zendy; G. S. Huang | Zendy; HaoChung Kuo | Zendy; S. C. Wang | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Recent progress on GaN-based vertical cavity surface emitting lasers

Author(s) -

TienChang Lu,

C. C. Kao,

G. S. Huang,

HaoChung Kuo,

S. C. Wang

Publication year - 2007

Publication title -

proceedings of spie, the international society for optical engineering/proceedings of spie

Language(s) - English

Resource type - Conference proceedings

SCImago Journal Rank - 0.192

H-Index - 176

eISSN - 1996-756X

pISSN - 0277-786X

DOI - 10.1117/12.729281

Subject(s) - materials science , optoelectronics , laser linewidth , laser , dielectric , vertical cavity surface emitting laser , epitaxy , semiconductor laser theory , active layer , distributed bragg reflector laser , optics , layer (electronics) , semiconductor , nanotechnology , physics , thin film transistor

We report the recent progress of GaN-based VCSELs with two different laser structures. One is a hybrid cavity structure comprised an epitaxial AlN/GaN DBR, an InGaN/GaN MQW active region and a top dielectric DBR. Another is a dielectric cavity structure comprised an InGaN/GaN MQW layer sandwiched by two dielectric DBRs. Both lasers achieved laser action under optical pumping at the room temperature with narrow linewidth. The detailed characteristics of VCSELs will be reported. The status of the electrically pumped VCSEL will also be presented.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research