InGaAsSb/AlGaAsSb heterojunction phototransistors for infrared applications | Zendy

Tamer F. Refaat | Zendy; M. N. Abedin | Zendy; O.V. Sulima | Zendy; Syed Ismail | Zendy; Upendra N. Singh | Zendy

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InGaAsSb/AlGaAsSb heterojunction phototransistors for infrared applications

Author(s) -

Tamer F. Refaat,

M. N. Abedin,

O.V. Sulima,

Syed Ismail,

Upendra N. Singh

Publication year - 2006

Publication title -

proceedings of spie, the international society for optical engineering/proceedings of spie

Language(s) - English

Resource type - Conference proceedings

SCImago Journal Rank - 0.192

H-Index - 176

eISSN - 1996-756X

pISSN - 0277-786X

DOI - 10.1117/12.680684

Subject(s) - responsivity , quantum efficiency , dark current , heterojunction , optoelectronics , photodiode , physics , specific detectivity , materials science , infrared , optics , photodetector

High quality infrared (IR) quantum detectors are important for several applications, such as atmospheric remote sensing, chemical detection and absorption spectroscopy. Although several IR detectors are commercially available, with different materials and structures, they provide limited performance regarding the signal-to-noise ratio and the corresponding minimum detectable signal. InGaAsSb/AlGaAsSb heterojunction based phototransistors show strong potential for developing IR sensors with improved performance. In this paper, the performance of a novel n-p-n InGaAsSb/AlGaAsSb heterojunction phototransistor is presented. This performance study is based on experimental characterization of the device dark current, noise and spectral response. Detectivity of 1.7x10 9 cmHz 1/2

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