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Evanescent wave imaging in optical lithography
Author(s) -
Bruce W. Smith,
Yongfa Fan,
Jianming Zhou,
Neal Lafferty,
Andrew Estroff
Publication year - 2006
Publication title -
proceedings of spie, the international society for optical engineering/proceedings of spie
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.192
H-Index - 176
eISSN - 1996-756X
pISSN - 0277-786X
DOI - 10.1117/12.657322
Subject(s) - photomask , superlens , optics , evanescent wave , lithography , photoresist , photolithography , materials science , refractive index , excimer laser , optoelectronics , wavelength , interference (communication) , interference lithography , laser , resist , physics , fabrication , nanotechnology , computer science , layer (electronics) , medicine , computer network , channel (broadcasting) , alternative medicine , pathology
New applications of evanescent imaging for microlithography are introduced. The use of evanescent wave lithography (EWL) has been employed for 26nm resolution at 1.85NA using a 193nm ArF excimer laser wavelength to record images in a photoresist with a refractive index of 1.71. Additionally, a photomask enhancement effect is described using evanescent wave assist features (EWAF) to take advantage of the coupling of the evanescent energy bound at the substrate-absorber surface, enhancing the transmission of a mask opening through coupled interference.

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